IXFH 110N10P IXFV110N10P
IXFV 110N10PS
250
Fig. 7. Input Adm ittance
70
Fig. 8. Transconductance
225
200
175
T J = -40 o C
25 o C
150 o C
60
50
150
125
100
75
50
25
0
40
30
20
10
0
T J = -40 o C
25 o C
150 o C
4
5
6
7
8
9
10
11
0
50
100
150
200
250
300
350
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
10
I D - Amperes
Fig. 10. Gate Charge
300
250
200
150
9
8
7
6
5
4
V DS = 50V
I D = 55A
I G = 10mA
100
50
0
T J = 150 o C
T J = 25 o C
3
2
1
0
0.4
0.6
0.8
1 1.2 1.4
V S D - Volts
1.6
1.8
2
0
20
40 60 80
Q G - nanoCoulombs
100
120
10000
Fig. 11. Capacitance
1000
Fig. 12. Forw ard-Bias
Safe Operating Area
T J = 175 o C
T C = 25 o C
1000
C iss
100
R DS(on) Limit
25μs
100μs
C oss
1ms
100
f = 1MHz
C rss
10
DC
10ms
0
5
10
15 20 25
V DS - Volts
30
35
40
1
10
V D S - Volts
100
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
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